Coaxial fiber-shaped supercapacitors are a promising class of energy storage devices requiring high performance for flexible and miniature electronic devices. Yet, they are still struggling from inferior energy density, which comes from the limited choices in materials and structure used. Here, Zn-doped CuO nanowires were designed as 3D framework for aligned distributing high mass loading of MnO2 nanosheets. Zn could be introduced into the CuO crystal lattice to tune the covalency character and thus improve charge transport. The Zn–CuO@MnO2 as positive electrode obtained superior performance without sacrificing its areal and gravimetric capacitances with the increasing of mass loading of MnO2 due to 3D Zn–CuO framework enabling efficient electron transport. A novel category of free-standing asymmetric coaxial fiber-shaped supercapacitor based on Zn0.11CuO@MnO2 core electrode possesses superior specific capacitance and enhanced cell potential window. This asymmetric coaxial structure provides superior performance including higher capacity and better stability under deformation because of sufficient contact between the electrodes and electrolyte. Based on these advantages, the as-prepared asymmetric coaxial fiber-shaped supercapacitor exhibits a high specific capacitance of 296.6 mF cm−2 and energy density of 133.47 μWh cm−2. In addition, its capacitance retention reaches 76.57% after bending 10,000 times, which demonstrates as-prepared device’s excellent flexibility and long-term cycling stability.

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HfOx-based resistive random-access memory (RRAM) devices are being widely considered as both non-volatile memories for digital computation and synaptic memory for neuromorphic computing applications. The resistive switching mechanism in these...

Hafnium oxide non-volatile memories have shown promise as an artificial synapse in neuromorphic computing architectures. However, there is still a need to fundamentally understand how to reliably control the analog resistance change induced by oxygen ions that partially rupture or re-form the conductive filament. In this work, the impact of measurement conditions (pulse amplitude and pulse width) and titanium dopants on the analog resistance change of atomic layer deposited hafnium oxide memristor synapses are studied. A lower pulse amplitude improves the linearity of resistance change as a function of the number of pulses but results in a smaller memory window. The addition of titanium dopants does not substantively change the analog resistance modulation of hafnium oxide. Density functional theory calculations show that titanium strongly impacts oxygen ion motion in the Hf xTi yO z matrix but does not impact significantly in the HfTi metallic filament. This study demonstrates that the analog characteristic of Hf xTi yO z artificial synapses is largely independent of the titanium doped bulk oxide since the resistance change is primarily controlled by the HfTi metallic conducting filament.