Solar cells are attractive candidates for clean and renewable power; with miniaturization, they might also serve as integrated power sources for nanoelectronic systems. The use of nanostructures or nanostructured materials represents a general approach to reduce both cost and size and to improve efficiency in photovoltaics. Nanoparticles, nanorods and nanowires have been used to improve charge collection efficiency in polymer-blend and dye-sensitized solar cells, to demonstrate carrier multiplication, and to enable low-temperature processing of photovoltaic devices. Moreover, recent theoretical studies have indicated that coaxial nanowire structures could improve carrier collection and overall efficiency with respect to single-crystal bulk semiconductors of the same materials. However, solar cells based on hybrid nanoarchitectures suffer from relatively low efficiencies and poor stabilities. In addition, previous studies have not yet addressed their use as photovoltaic power elements in nanoelectronics. Here we report the realization of p-type/intrinsic/n-type (p-i-n) coaxial silicon nanowire solar cells. Under one solar equivalent (1-sun) illumination, the p-i-n silicon nanowire elements yield a maximum power output of up to 200 pW per nanowire device and an apparent energy conversion efficiency of up to 3.4 per cent, with stable and improved efficiencies achievable at high-flux illuminations. Furthermore, we show that individual and interconnected silicon nanowire photovoltaic elements can serve as robust power sources to drive functional nanoelectronic sensors and logic gates. These coaxial silicon nanowire photovoltaic elements provide a new nanoscale test bed for studies of photoinduced energy/charge transport and artificial photosynthesis, and might find general usage as elements for powering ultralow-power electronics and diverse nanosystems.

Metallic single-walled carbon nanotubes have been proposed to be good one-dimensional conductors. However, the finite curvature of the graphene sheet that forms the nanotubes and the broken symmetry due to the local environment may modify their electronic properties. We used low-temperature atomically resolved scanning tunneling microscopy to investigate zigzag and armchair nanotubes, both thought to be metallic. "Metallic" zigzag nanotubes were found to have energy gaps with magnitudes that depend inversely on the square of the tube radius, whereas isolated armchair tubes do not have energy gaps. Additionally, armchair nanotubes packed in bundles have pseudogaps, which exhibit an inverse dependence on tube radius. These observed energy gaps suggest that most "metallic" single-walled nanotubes are not true metals, and they have implications for our understanding of the electronic properties and potential applications of carbon nanotubes.

Recent scanning tunneling microscopy studies of the intrinsic electronic properties of single-walled carbon nanotubes (SWNTs) are overviewed in this Account. A brief theoretical treatment of the electronic properties of SWNTs is developed, and then the effects of finite curvature and broken symmetry on electronic properties, the unique one-dimensional energy dispersion in nanotubes, the interaction between local spins and carriers in metallic nanotubes systems, and the atomic structure and electronic properties of intramolecular junctions are described. The implications of these studies for understanding fundamental one-dimensional physics and future nanotube device applications are also discussed.

Intramolecular junctions in single-walled carbon nanotubes are potentially ideal structures for building robust, molecular-scale electronics but have only been studied theoretically at the atomic level. Scanning tunneling microscopy was used to determine the atomic structure and electronic properties of such junctions in single-walled nanotube samples. Metal-semiconductor junctions are found to exhibit an electronically sharp interface without localized junction states, whereas a more diffuse interface and low-energy states are found in metal-metal junctions. Tight-binding calculations for models based on observed atomic structures show good agreement with spectroscopy and provide insight into the topological defects forming intramolecular junctions. These studies have important implications for applications of present materials and provide a means for assessing efforts designed to tailor intramolecular junctions for nanoelectronics.

An inorganic/organic heterostructure light-emitting diode consisting of the hole-transporting layer N, N'-di(naphth-2-yl)- N, N'-diphenylbenzidine (NPB) and n-type ZnO nanorods fabricated by hydrothermal decomposition is reported. Poly(methyl methacrylate) was used to form a smooth surface on top of ZnO nanorod array with ZnO nanorod tops exposed for subsequent NPB deposition. An unusual ultraviolet emission at 342 nm was observed in the electroluminescence spectrum. Compared to band gap energy of ZnO (3.37 eV), the excitonic emission is blue-shifted and broadened. The mechanism of the blue shift is discussed in terms of the energy band diagram of the heterostructure.