No abstract

Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit control, longer coherence times, and improved extensibility. Recent advances in heterostructure material growth have opened new possibilities for employing hole spins in semiconductors for qubit applications. Undoped, strained Ge/SiGe quantum wells are promising candidate hosts for hole spin-based qubits due to their low disorder, large intrinsic spin-orbit coupling strength, and absence of valley states. Here, we use a simple one-layer gated device structure to demonstrate both a single quantum dot as well as coupling 2 between two adjacent quantum dots. The hole effective mass in these undoped structures, m* ~ 0.08 m0, is significantly lower than for electrons in Si/SiGe, pointing to the possibility of enhanced tunnel couplings in quantum dots and favorable qubit-qubit interactions in an industry-compatible semiconductor platform. CONCLUSIONSWe have demonstrated lithographically defined single and double hole quantum dots in high quality strained Ge/SiGe quantum wells. These results strongly suggest that this material system may serve as a viable host for spin-based qubits (compatible with CMOS processing) and enable quantitative comparisons between quantum dots in electron and hole systems. Multi-metal-layer devices, as are commonly used in Si/SiGe, should be directly applicable to Ge/SiGe to increase the sharpness of tunnel barriers and provide more orthogonal control of coupling between adjacent quantum dots. Development of successful qubit architectures will ultimately call for indepth studies of qubit decoherence mechanisms in this system, in particular the impact of charge noise due to the enhanced spin-orbit coupling. AUTHOR INFORMATION

photosynthetic or solar-driven watersplitting systems, the oxygen evolution reaction (OER) is driven by a four-chargecarrier transfer pathway, while either carbon dioxide reduction or the hydrogen evolution reaction takes place on the counter electrode. However, this halfreaction (i.e., the OER) is regarded as the kinetic bottleneck for both artificial photosynthesis and overall water splitting because of the large energy requirements (i.e., large overpotentials) for driving the multielectron transfer processes. Fortunately, light-absorbing semiconductor devices that utilize small bandgap materials, such as Si, GaAs, or GaP, have been demonstrated to be efficient photoelectrodes for achieving high performance catalysis of the OER [5,6] owing to their wide absorption region in the visible light spectrum. Nevertheless, the utilization of these small band gap materials has commonly suffered from the considerable issue of their valance bands having characteristically low driving forces, thereby leading to poor transfer of the charge carriers needed for water oxidation. The dynamic behavior of the photoinduced charge-carrier separation is a critical factor for addressing both the overpotential requirement and poor driving force to effectively facilitate the transport of the excited minority carriers (i.e., holes) towardThe integration of surface metal catalysts with semiconductor absorbers to produce photocatalytic devices is an attractive method for achieving high-efficiency solar-induced water splitting. However, once combined with a photoanode, detailed discussions of the light-induced processes on metal/semiconductor junction remain largely inadequate. Here, by employing in situ X-ray scattering/ diffraction and absorption spectroscopy, the generation of a photoinduced adaptive structure is discovered at the interfacial metal-semiconductor (M-S) junction between a state-of-the-art porous silicon wire and nickel electrocatalyst, where oxygen evolution occurs under illumination. The adaptive layer in M-S junction through the light-induced activation can enhance the voltage by 247 mV (to reach a photocurrent density of 10 mA cm −2 ) with regard to the fresh photoanode, and increase the photocurrent density by six times at the potential of 1.23 V versus reversible reference electrode (RHE). This photoinduced adaptive layer offers a new perspective regarding the catalytic behavior of catalysts, especially for the photocatalytic water splitting of the system, and acting as a key aspect in the development of highly efficient photoelectrodes.

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Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin transport, where the spin precession length is shorter than the mean free path such that the gate-controlled spin precession is not randomized by disorder. In this letter, we report the observation of a gate-induced crossover from weak localization to weak anti-localization in the magneto-resistance of a high-mobility two-dimensional hole gas in a strained germanium quantum well. From the magneto-resistance, we extract the phase-coherence time, spin-orbit precession time, spin-orbit energy splitting, and cubic Rashba coefficient over a wide density range. The mobility and the mean free path increase with increasing hole density, while the spin precession length decreases due to increasingly stronger spin-orbit coupling. As the density becomes larger than ∼6 × 1011 cm-2, the spin precession length becomes shorter than the mean free path, and the system enters the ballistic spin transport regime. We also report here the numerical methods and code developed for calculating the magneto-resistance in the ballistic regime, where the commonly used HLN and ILP models for analyzing weak localization and anti-localization are not valid. These results pave the way toward silicon-compatible spintronic devices.