Magnetic Weyl semimetals with broken time-reversal symmetry are expected to generate strong intrinsic anomalous Hall effects, due to their large Berry curvature. Here, we report a magnetic Weyl semimetal candidate, Co3Sn2S2, with a quasi-two-dimensional crystal structure consisting of stacked Kagomé lattices. This lattice provides an excellent platform for hosting exotic topological quantum states. We observe a negative magnetoresistance that is consistent with the chiral anomaly expected from the presence of Weyl nodes close to the Fermi level. The anomalous Hall conductivity is robust against both increased temperature and charge conductivity, which corroborates the intrinsic Berry-curvature mechanism in momentum space. Owing to the low carrier density in this material and the significantly enhanced Berry curvature from its band structure, the anomalous Hall conductivity and the anomalous Hall angle simultaneously reach 1130 Ω−1 cm−1 and 20%, respectively, an order of magnitude larger than typical magnetic systems. Combining the Kagomé-lattice structure and the out-of-plane ferromagnetic order of Co3Sn2S2, we expect that this material is an excellent candidate for observation of the quantum anomalous Hall state in the two-dimensional limit.
The half-Heusler rare-earth intermetallic GdPtBi has recently gained attention due to peculiar magnetotransport phenomena that have been associated with the possible existence of Weyl fermions, thought to arise from the crossings of spin-split conduction and valence bands. On the other hand, similar magnetotransport phenomena observed in other rare-earth intermetallics have often been attributed to the interaction of itinerant carriers with localized magnetic moments stemming from the 4 f shell of the rare-earth element. In order to address the origin of the magnetotransport phenomena in GdPtBi, we performed a comprehensive study of the magnetization, electrical, and thermal magnetoresistivity on two single-crystalline GdPtBi samples. In addition, we performed an analysis of the Fermi surface via Shubnikov-de Haas oscillations in one of the samples and compared the results to ab initio band structure calculations. Our findings indicate that the electrical and thermal magnetotransport in GdPtBi cannot be solely explained by Weyl physics and is strongly influenced by the interaction of both itinerant charge carriers and phonons with localized magnetic Gd ions and possibly also paramagnetic impurities.
The development of high‐density magnetic recording media is limited by superparamagnetism in very small ferromagnetic crystals. Hard magnetic materials with strong perpendicular anisotropy offer stability and high recording density. To overcome the difficulty of writing media with a large coercivity, heat‐assisted magnetic recording was developed, rapidly heating the media to the Curie temperature Tc before writing, followed by rapid cooling. Requirements are a suitable Tc, coupled with anisotropic thermal conductivity and hard magnetic properties. Here, Rh2CoSb is introduced as a new hard magnet with potential for thin‐film magnetic recording. A magnetocrystalline anisotropy of 3.6 MJ m−3 is combined with a saturation magnetization of μ0Ms = 0.52 T at 2 K (2.2 MJ m−3 and 0.44 T at room temperature). The magnetic hardness parameter of 3.7 at room temperature is the highest observed for any rare‐earth‐free hard magnet. The anisotropy is related to an unquenched orbital moment of 0.42 μB on Co, which is hybridized with neighboring Rh atoms with a large spin–orbit interaction. Moreover, the pronounced temperature dependence of the anisotropy that follows from its Tc of 450 K, together with a thermal conductivity of 20 W m−1 K−1, make Rh2CoSb a candidate for the development of heat‐assisted writing with a recording density in excess of 10 Tb in.−2.
The Berry phase understanding of electronic properties has attracted special interest in condensed matter physics, leading to phenomena such as the anomalous Hall effect and the topological Hall effect. A non-vanishing Berry phase, induced in momentum space by the band structure or in real space by a non-coplanar spin structure, is the origin of both effects. Here, we report a sign conversion of the anomalous Hall effect and a large topological Hall effect in (Cr0.9B0.1)Te single crystals. The spin reorientation from an easy-axis structure at high temperature to an easy-cone structure below 140 K leads to conversion of the Berry curvature, which influences both, anomalous and topological, Hall effects in the presence of an applied magnetic field and current. We compare and summarize the topological Hall effect in four categories with different mechanisms and have a discussion into the possible artificial fake effect of topological Hall effect in polycrystalline samples, which provides a deep understanding of the relation between spin structure and Hall properties.In condensed matter physics, Berry phases have enabled a wider understanding of many physical concepts and phenomena, such as chiral anomalies [1,2] , magnetic monopoles [3] , and the anomalous Nernst effect [4] . Among them, the intrinsic anomalous Hall effect (AHE) requires the absence of time reversal symmetry and the orbital degeneracy to be lifted. The former is usually seen in ferromagnetic systems but also can be found in specific antiferromagnetic systems. The latter is due to relativistic effects such as the spin-orbit interaction, but can also be induced by a non-collinear magnetic spin texture [5,6] . The combination of these phenomena leads to momentumspace Berry curvature as a linear response to an applied electric field [7,8] . However, a real-space Berry phase originating from non-coplanar spin texture or magnetic topological excitations like
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