Epsilon-near-zero (ENZ) materials, when probed at or near wavelengths corresponding to their zero permittivity crossing points, have unique and interesting properties that can be exploited for enhancing nanoscale light−matter interactions. Here, we experimentally show that over an order of magnitude increase in the absorption band of a periodically patterned metal− dielectric−metal structure can be obtained by integrating an indium tin oxide (ITO) subwavelength nanolayer into the insulating dielectric gap region. Through incorporation of a 12 nm thick ITO layer between the patterned gold nanodisks and the SiO 2 dielectric layer, a 240 nm wide, flat-top perfect (>98%) absorption centered at 1550 nm wavelength is enabled. The demonstrated wideband, perfect absorption resonance is shown to be due to coupling between the gap plasmon mode of the metasurface and the ENZ mode in the nanoscale ITO film.

Optical limiters transmit low-intensity light, while blocking laser radiation with excessively high intensity or fluence. A typical passive optical limiter absorbs most of the high level radiation, which can cause irreversible damage. In this communication we report the first experimental realization of a reflective optical limiter, which does not absorb the high-level laser radiation, but rather reflects it back to space. The design is based on a periodic layered structure composed of alternating SiO2 and Si3N4 layers with a single GaAs defect layer in the middle. At low intensities, the layered structure displays a strong resonant transmission via the localized defect mode. At high intensities, the two-photon absorption in the GaAs layer suppresses the localized mode along with the resonant transmission, the entire layered structure turns highly reflective within a broad frequency range covering the entire photonic band gap of the periodic layered structure. By contrast, a stand-alone GaAs layer would absorb most of the high-level radiation, thus acting as a basic absorptive optical limiter. The proposed design can only perform at shortwave IR, where GaAs displays negligible linear absorption and very strong nonlinear two-photon absorption. With judicious choice of optical materials, the same principle can be replicated for any other frequency range.Comment: We present the first experimental realization of reflective limiters in the optical domain (see theoretical proposals in arXiv:1412.6207, arXiv:1309.2595

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