HIGHLIGHTSOur cost model shows competitive perovskite PV requires high-throughput processingWe replace conventional annealing with rapid thermal processing without PCE lossThe combination of RTA and blade coating establishes a scalable processing routeIn situ XRD reveals a perovskite conversion mechanism and role of intermediates Bruening et al., Joule SUMMARYCost modeling shows that high-throughput processing of perovskite solar cells is required not only to compete with incumbent technologies in terms of levelized cost of energy, but more importantly, it is the major enabling factor facilitating sustainable growth rates of solar cell manufacturing capacity commensurate with global climate targets. We performed rapid thermal annealing at bladecoating speed to quickly deposit and convert perovskite thin films for scalable manufacturing of perovskite solar cells. In situ X-ray diffraction during film deposition and thermal conversion gave insight into the formation of crystalline intermediates, essential for high-quality films. Parameters were optimized based on the in situ study, allowing perovskite films to be annealed within 3 s with a champion power conversion efficiency of 16.8%. This opens up a clear pathway toward industrial-scale high-throughput manufacturing, which is required to fulfill the projected photovoltaic installation rates needed to reach climate goals.

A robust and transparent silica-like coating that imparts superhydrophobicity to a surface through its hierarchical multilevel self-assembled structure is demonstrated. This approach involves iterative steps of spin-coating, annealing, and etching of polystyrene-block-polydimethylsiloxane block copolymer thin films to form a tailored multilayer nanoscale topographic pattern with a water contact angle up to 155˚. A model based on the hierarchical topography was developed to calculate the

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Scanning electron microscopy (SEM) is a versatile technique used to image samples at the nanoscale. Conventional imaging by this technique relies on finding the average intensity of the signal generated on a detector by secondary electrons (SEs) emitted from the sample and is subject to noise due to variations in the voltage signal from the detector. This noise can result in degradation of the SEM image quality for a given imaging dose. SE count imaging, which uses the direct count of SEs detected from the sample instead of the average signal intensity, would overcome this limitation and lead to improvement in SEM image quality.In this paper, we implement an SE count imaging scheme by synchronously outcoupling the detector and beam scan signals from the microscope and using custom code to count detected SEs. We demonstrate a ∼30% increase in the image signal-to-noise-ratio due to SE counting compared to conventional imaging. The only external hardware requirement for this imaging scheme is an oscilloscope fast enough to accurately sample the detector signal for SE counting, making the scheme easily implementable on any SEM.