Flexible barrier films preventing permeation of gases and moistures are important for many industries ranging from food to medical and from chemical to electronic. From this perspective, graphene has recently attracted particular interest because its defect-free monolayers are impermeable to all atoms and molecules. However, it has been proved to be challenging to develop large-area defectless graphene films suitable for industrial use. Here we report barrier properties of multilayer graphitic films made by gentle chemical reduction of graphene oxide laminates with hydroiodic and ascorbic acids. They are found to be highly impermeable to all gases, liquids and aggressive chemicals including, for example, hydrofluoric acid. The exceptional barrier properties are attributed to a high degree of graphitization of the laminates and little structural damage during reduction. This work indicates a close prospect of graphene-based flexible and inert barriers and protective coatings, which can be of interest for numerous applications.
Superconducting layered transition metal dichalcogenides (TMDs) stand out among other superconductors due to the tunable nature of the superconducting transition, coexistence with other collective electronic excitations (charge density waves), and strong intrinsic spin-orbit coupling. Molybdenum disulfide (MoS2) is the most studied representative of this family of materials, especially since the recent demonstration of the possibility to tune its critical temperature, Tc, by electric-field doping. However, just one of its polymorphs, band-insulator 2H-MoS2, has so far been explored for its potential to host superconductivity. We have investigated the possibility to induce superconductivity in metallic polytypes, 1T- and 1T'-MoS2, by potassium (K) intercalation. We demonstrate that at doping levels significantly higher than that required to induce superconductivity in 2H-MoS2, both 1T and 1T' phases become superconducting with Tc = 2.8 and 4.6 K, respectively. Unusually, K intercalation in this case is responsible both for the structural and superconducting phase transitions. By adding new members to the family of superconducting TMDs, our findings open the way to further manipulate and enhance the electronic properties of these technologically important materials.
Research on black phosphorus has been experiencing a renaissance over the last years, after the demonstration that few-layer crystals exhibit high carrier mobility and a thickness-dependent bandgap. Black phosphorus is also known to be a superconductor under high pressure exceeding 10 GPa. The superconductivity is due to a structural transformation into another allotrope and accompanied by a semiconductor-metal transition. No superconductivity could be achieved for black phosphorus in its normal orthorhombic form, despite several reported attempts. Here we describe its intercalation by several alkali metals (Li, K, Rb and Cs) and alkali-earth Ca. All the intercalated compounds are found to be superconducting, exhibiting the same (within experimental accuracy) critical temperature of 3.8±0.1 K and practically identical characteristics in the superconducting state. Such universal superconductivity, independent of the chemical composition, is highly unusual. We attribute it to intrinsic superconductivity of heavily doped individual phosphorene layers, while the intercalated layers of metal atoms play mostly a role of charge reservoirs.
The metal-organic compounds, Bi[(EPR 2 ) 2 N] 3 (E ) S, Se; R ) Ph, i Pr), have been synthesized and used as single-source precursors for the deposition of bismuth chalcogenide thin films via low-pressure and aerosol-assisted metal-organic chemical vapor deposition. Crystalline thin films of rhombohedral Bi 2 Se 3 (using Bi[(SeP i Pr 2 ) 2 N] 3 ), hexagonal BiSe (using Bi[(SePPh 2 ) 2 N] 3 ), and orthorhombic Bi 2 S 3 (using Bi[(SPR 2 ) 2 N] 3 ) have been deposited on glass substrates. Films have been characterized by X-ray powder diffraction, scanning electron microscopy, and energy-dispersive analysis of X-rays.
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