No abstract

Antiferromagnets have recently moved into the focus of application-related research, with the perspective to use them in future spintronics devices. At the same time the experimental determination of the detailed spin texture remains challenging. Here we use spin-polarized scanning tunneling microscopy to investigate the spin structure of antiferromagnetic domain walls. Comparison with spin dynamics simulations allows the identification of a new type of domain wall, which is a superposition state of the adjacent domains. We determine the relevant magnetic interactions and derive analytical formulas. Our experiments show a pathway to control the number of domain walls by boundary effects, and demonstrate the possibility to change the position of domain walls by interaction with movable adsorbed atoms. The knowledge about the exact spin structure of the domain walls is crucial for an understanding and theoretical modelling of their properties regarding, for instance, dynamics, response in transport experiments, and manipulation.

When magnetic skyrmions are moved via currents, they do not strictly travel along the path of the current, instead their motion also gains a transverse component. This so-called skyrmion Hall effect can be detrimental in potential skyrmion devices because it drives skyrmions towards the edge of their hosting material where they face potential annihilation. Here we experimentally modify a skyrmion model system—an atomic Pd/Fe bilayer on Ir(111)—by decorating the film edge with ferromagnetic Co/Fe patches. Employing spin-polarized scanning tunneling microscopy, we demonstrate that this ferromagnetic rim prevents skyrmion annihilation at the film edge and stabilizes skyrmions and target states in zero field. Furthermore, in an external magnetic field the Co/Fe rim can give rise to skyrmions pinned to the film edge. Spin dynamics simulations reveal how a combination of different attractive and repulsive skyrmion-edge interactions can induce such an edge-pinning effect for skyrmions.