The room temperature operation of a single electron switch
fabricated by conventional Si large-scale integration (LSI)
technologies has been demonstrated. The quantum dot formed by the
electric field effect of a dual gate structure was miniaturized to a
smaller size than the state-of-the-art feature size, using the
controllable process technologies such as polysilicon reoxidation
and polysilicon sidewall formation. Electrical measurement showed a
room temperature Coulomb oscillation and a movement of the
oscillation peak in two independently controllable tunnel
junctions. Based on the device physics, the modified macro modeling
of fabricated single electron switches was performed. Existing
concept of single electron transistor (SET) macro modeling was first
applied to the experimental result, and the circuit performance of
the fabricated device was effectively predicted using this modeling
scheme.
The limited sensitivity of thinfilm based sensors has motivated the search for sensing structures and materials with greater sensing performance. Although thinfilm based SAW devices have been used as force, pressure, chemical and gas sensors so far. It is limited by the exposed sensing surface of the thinfilm. A feasibility study has been done by implementing the ZnO nanorods (NRs) to enhance the device sensitivity by greatly increase the exposed sensing surface. The implementation of these ZnO NRs as sensing elements is expected to enhance the sensing power due to the large surface to volume ratio. The sensing mechanism in this design is by detecting the minute change of seismic mass for ZnO NRs using surface acoustic wave before and after the attachment of reacting chemical liquid and gas substance.
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