The Analysis of Dark Signals in the CMOS APS Imagers From the Characterization of Test Structures

A low-noise single-photon detector implemented in a 130nm CMOS imaging process

“…Until now however, the use of deep-submicron process resulted in very high levels of noise in SPADs, as higher doping levels increase the intrinsic noise level of the diode. Moreover, the presence of STI and of reduced annealing steps has been shown to have detrimental effects to noise performance due to additional defects introduced in the lattice [14,15].…”

Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies

“…4 and consider r n % r p , 10,11,15 in this work this may be too great an approximation, 16 since Au contamination produces a deep level with r n /r p ratio of about 0.02 and one goal of this study is to model generation currents accurately. The distribution of metal atoms over the pixel matrix due to contamination is considered random and therefore will follow a Poisson distribution, in agreement with previous observations.…”

“…9 More recently, this technique allowed the characterization of radiation-induced defects in CCDs, 10 and unknown contaminations have been investigated by DCS and deep-level transient spectroscopy (DLTS) in CISs. 11 In this work, detection and characterization of gold and tungsten contamination by ion implantation in CISs have been studied using both DCS and DLTS.…”

A new single-photon avalanche diode in 90nm standard CMOS technology

“…The purpose of using a guard ring is to shape the electric field in the active area so as to maximize the high electric field present in the design at the center of the multiplication region and to decrease it at the corners. However, the introduction of some annealing steps near the STI structures which are used in this design can lead to detrimental effects to the noise performance [11]. Fig.…”