The present study addresses whether exercise during pregnancy in mouse alters mitochondrial function in the brains of the resultant offspring. We divided pregnant mice into four groups: a control group and groups of mice that exercised for 20 (E20m), 30 (E30m) and 40 min/d (E40m). The pregnant mice ran on a treadmill at 12 m/min, 5 d/week for a duration of 3 weeks. The protein expression of cytochrome c oxidase subunit Va (CVa) was downregulated in the offspring of the E20m group, unlike that in the control animals, whereas CVa expression was reserved in the E40m neonates. The F1-ATPase catalytic core (Core) protein expression levels were the highest in the E40m group neonates. Complex I, IV and ATPase activities were significantly lower in the E20m group than that in the control group neonates and were reserved in the E30m and E40m group neonates. The activities of citrate synthase and pyruvate dehydrogenase were consistent with those of complex I, IV and ATPase. Peroxisome proliferator-activated receptor-gamma coactivator 1-alpha, mitochondrial transcription factor A, nuclear respiratory factor-1 and mitochondrial DNA showed high levels of expression in the E40m neonates compared with the other groups. Malondialdehyde (MDA) levels in E40m neonates were higher than that in the controls but were lower than that in the E20m neonates. Finally, 40 min/d of maternal exercise improved mitochondrial function in the resultant pups and was concomitant with brain-derived trophic factor induction in the hippocampus, thereby functionally improving short-term memory.

We present an accelerated SmartSpice model that can detect dynamic threshold voltage shift (ΔVth)‐related failure of an oxide thin‐film transistor (TFT)‐based gate driver. During gate driver operation, the alternating HIGH and LOW input signals repeatedly stress and relax the TFT components of the gate driver. Because oxide TFTs do not recover completely during the LOW input level, ΔVth cumulated during the HIGH input levels may result in failure of gate drivers. For correct failure analysis, a TFT model that can detect dynamic ΔVth is, therefore, needed to replace current TFT models, as they cannot account for dynamic ΔVth. The model presented herein works correctly with varying temperature and input signals of any shape.

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We present an accelerated SmartSpice model that can detect dynamic threshold voltage shift (ΔVth)‐related failure of an oxide thin‐film transistor (TFT)‐based gate driver. Because oxide TFTs do not recover completely after application of stress (or when input is LOW), cumulative ΔVth that is induced during the HIGH of the input signal may result in failure of gate drivers. For correct failure analysis, a TFT model that can detect dynamic ΔVth is, therefore, needed for the replacement of the current TFT models that cannot account for dynamic ΔVth. The model presented herein works correctly with varying temperature and any input signal.