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We present an accelerated SmartSpice model that can detect dynamic threshold voltage shift (ΔVth)‐related failure of an oxide thin‐film transistor (TFT)‐based gate driver. During gate driver operation, the alternating HIGH and LOW input signals repeatedly stress and relax the TFT components of the gate driver. Because oxide TFTs do not recover completely during the LOW input level, ΔVth cumulated during the HIGH input levels may result in failure of gate drivers. For correct failure analysis, a TFT model that can detect dynamic ΔVth is, therefore, needed to replace current TFT models, as they cannot account for dynamic ΔVth. The model presented herein works correctly with varying temperature and input signals of any shape.

The procedure to calibrate TCAD simulation data, based on both measurement data and the probability of occupation functions, is described . By using a density-of-states model and a band-to-band tunneling model in the Silvaco Atlas device simulator, insight into the TFTs and more accurate TCAD simulations can be obtained.