The perovskite oxide BaSnO3 is a highly topical material for next-generation transparent conducting semiconductors. The foreign chemical doping strategy is largely used to realize the high conductivity in BaSnO3. Removal of oxygen in BaSnO3 is another route to get high conductivity, but the oxygen vacancy–property relationships have not been realized completely, which is of fundamental importance for the future optoelectronic applications. Here we report how the oxygen vacancies in sputtered BaSnO3 films can account for the structural and chemical environment, the transport phenomena, and the optoelectronic properties. Oxygen vacancies in BaSnO3 films cause the expansion of the unit cell along the out-of-plane direction, enhance the conductivity, transform the electronic transport mechanism from the thermal activation model to the variable-range hopping (VRH) model, and spawn the sub-band level-assisted photoconduction. The present work further strengthens our understanding of the oxygen effect on the physical properties in BaSnO3-based systems.

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Artificially constructed oxide heterointerfaces have attracted much attention. Herein, the novel all-perovskite p-n heterojunction composed of a colossal magnetoresistive manganite La 0.7 Sr 0.3 MnO 3 (LSMO) and an n-type transparent semiconducting BaSnO 3 (BSO) is designed via optimizing the growth condition. This LSMO/BSO p-n junction exhibits good rectification with a forward-to-reverse ratio of 275 at 1 V, high photo detection capability with a photo-to-dark current of 581.9 at À0.5 V, high ultraviolet light sensitivity with a UV (360 nm)-to-visible (532 nm) ratio of $2.4 Â 10 3 , and a significantly magneto-tunable photocurrent with a variation ratio of $1.25 % under 532 nm illumination and 0.5 T magnetic field. As a result, combining synergistically the functionality of diode and magnetically tunable photo detector, the LSMO/BSO p-n junction is a promising candidate for advanced magneto-optoelectronic devices.In this work, all-perovskite heterostructures composed of a correlated electron oxide La 0.7 Sr 0.3 MnO 3 (LSMO) and a transparent semiconducting BaSnO 3 (BSO) were deposited on SrTiO 3 (001) substrates. Through adopting appropriate experimental parameters, a diode-like behavior was observed in LSMO/BSO junction, which exhibited good rectification with a forward-toreverse ratio of 275 at 1 V, high photo detection capability with a photo-to-dark current of 581.9 at À0.5 V, high ultraviolet light sensitivity with a UV (360 nm)-to-visible (532 nm) ratio of %2.4 Â 10 3 , and significantly magneto-tunable photocurrent with a variation ratio of %1.25% under 532 nm illumination and 0.5 T magnetic field. As a result, combining synergistically the functionality of diode and magnetically tunable photo detector, the LSMO/BSO p-n junction is a promising candidate for advanced magneto-optoelectronic devices.

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