To derive the impact of chip size reduction on optical efficiency in micro-LED array panels, blue InGaN/GaN LEDs, which consist of 21 × 7 arrays (60 ppi display) with different mesa sizes on sapphire substrates, are designed and fabricated in this study. Changing the mesa area of the chip is first proposed to investigate the luminous efficiency (cd/A) of the screen. The current efficiency with a peak wavelength of 450 nm reaches up to 14.29 cd/A for the biggest pixel 50 µ m × 60 µ m and to 12.25 cd/A for the 15 µ m × 25 µ m chip, delivering high-level efficiencies to the current LED research field. The mechanisms of size-dependent efficiency variation trends and efficiency droops of blue LEDs are investigated experimentally, confirming that the current efficiency is more efficient at high injection current density while exhibiting poorer performance at the low current density region for smaller chips. The peak efficiency corresponds to higher current density with a decrease in chip size according to the carrier recombination ABC model. Moreover, the characteristic curve of the spectrum and the changes in the yellow light band under different incident light conditions (i.e., 355 nm and 375 nm) are analyzed by photoluminescence.

Silicon Carbide (SiC) is a typical material for third-generation semiconductor. The thermal boundary resistance (TBR) of 4H-SiC/SiO2 interface, was investigated by both experimental measurements and theoretical calculations. The structure of 4H-SiC/SiO2 was characterized by using transmission electron microscopy and X-ray diffraction. The TBR is measured as 8.11×10 -8 m 2 K/W by 3ω method.Furthermore, the diffuse mismatch model was employed to predict the TBR of different interfaces which is in good agreement with measurements. Heat transport behavior based on phonon scattering perspective was also discussed to understand the variations of TBR across different interfaces. Besides, the intrinsic thermal conductivity of SiO2 thin films (200~1,500 nm in thickness) on 4H-SiC substrates was measured by 3ω procedure, as 1.42 W/m·K at room temperature. It is believed the presented results could provide useful insights on the thermal management and heat dissipation for SiC devices.

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A full-color display consisting of red and green photoluminescence cadmium-free quantum dots (QDs) as the color conversion material and excited by a 68 × 68 blue micro-LED flip chip array mounted on an active-matrix driving board was completed in this study. The QD photoresist (QDPR) lithography technology was reported in detail, and it has been proven to be a stable process route. The suitable thickness of 12 ± 1 µ m of the QDPR and black matrix was proposed to reduce the light cross talk between different sub-pixels. The thickness of the common color filter of 1–2 µm was made successfully between the quantum dot film and the cover glass, which can greatly reduce the leakage of blue backlight and decrease the quantum dots excitation by the ambient light, as well as improve the color gamut and color purity of the display panel. In addition, the high red and green light conversion efficiency reaches up to 78.1% and 296.5%, respectively, and the screen display can reach 98.8% NTSC on the CIE 1931 chromaticity. Representative RGB monochromatic pictures were displayed successfully and ≤ 0.04 viewing angle deviation of the display was measured precisely.