The long-term application of sensors in a high-temperature environment needs to address several challenges, such as stability at high temperatures for a long time, better wiring interconnection of sensors, and reliable and steady connection of the sensor and its external equipment. In order to systematically investigate the reliability of thin coatings at high temperatures for a long time, Au and Cr layers were deposited on silicon substrates by magnetron sputtering. Additionally, samples with different electrode thicknesses were annealed at different temperatures for a varied duration to study the effect of electrode thickness, temperature, and duration on the reliability of samples. The results of tensile and probe tests before and after heat treatment revealed that the mechanical strength and electrical properties have changed after annealing. In addition, the bonding interface was analyzed by a cross-sectional electron microscope. The analysis showed that long-term continuous high-temperature exposure would result in thinning of the electrode, formation of pores, recrystallization, and grain growth, all of which can affect the mechanical strength and electrical properties. In addition, it was observed that increasing the thickness of the gold layer will improve reliability, and the test results show that although the thin metal layer sample is in poor condition, it is still usable. The present study provides theoretical support for the application of thin coatings in high temperatures and harsh environments.

Platinum is an ideal material for high-temperature resistant device packaging due to its higher melting point and good electrical properties. In this paper, the thermocompression bonding of Pt–Pt metal electrodes was successfully realized through process exploration, and the package interconnection that meets the requirements was formed. A square bump with a side length of 160 µm and a sealing ring with a width of 80 µm were fabricated by magnetron sputtering. Different pressure parameters were selected for chip-level bonding; the bonding temperature was 350 °C for about 20 min. Analysis of the interface under a scanning electron microscope found that the metal Cr diffused into Pt. It was found that two chips sputtered with 300 nm metal Pt can achieve shear resistance up to 30 MPa by flip-chip bonding at 350 °C and 100 MPa temperature and pressure, respectively. The leakage rate of the sample is less than 2 × 10–3 Pa·cm3/s, the bonding interface is relatively smooth, and the hot-pressed metal bonding of Pt electrodes with good quality is realized. By comparing the failure rates at different temperatures and pressures, the process parameters for Pt–Pt bonding with higher success rates were obtained. We hope to provide new ideas and methods for the packaging of high-temperature resistant devices.

A graphene membrane acts as a highly sensitive element in a nano/micro–electro–mechanical system (N/MEMS) due to its unique physical and chemical properties. Here, a novel crossbeam structure with a graphene varistor protected by Si3N4 is presented for N/MEMS mechanical sensors. It substantially overcomes the poor reliability of previous sensors with suspended graphene and exhibits excellent mechanoelectrical coupling performance, as graphene is placed on the root of the crossbeam. By performing basic mechanical electrical measurements, a preferable gauge factor of ~1.35 is obtained. The sensitivity of the graphene pressure sensor based on the crossbeam structure chip is 33.13 mV/V/MPa in a wide range of 0~20 MPa. Other static specifications, including hysteresis error, nonlinear error, and repeatability error, are 2.0119%, 3.3622%, and 4.0271%, respectively. We conclude that a crossbeam structure with a graphene sensing element can be an application for the N/MEMS mechanical sensor.

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A chip-level hermetic package for a high-temperature graphene pressure sensor was investigated. The silicon cap, chip and substrate were stacked by Cu–Sn and Au–Au bonding to enable wide-range measurements while guaranteeing a high hermetic package. Prior to bonding, the sample was treated with Ar (5% H2) plasma. The Cu–Sn bonding was firstly performed at 260 °C for 15 min with a pressure of 9.9 MPa, and the corresponding process conditions for Au–Au bonding has increased to 300 °C, 20 min and 19.8 MPa respectively. The average shearing strength was 14.3 MPa, and an excellent leak rate of 1.72 × 10−4 Pa·cm3/s was also achieved. After high-temperature storage (HTS) at 350 °C for 10 h, the resistance of graphene decreased slightly because the dual bonding provided oxygen-free environment for graphene. The leakage rate of the device slightly increased to 2.1 × 10−4 Pa·cm3/s, and the average shear strength just decreased to 13.5 MPa. Finally, under the pressure range of 0–100 MPa, the graphene pressure sensor exhibited a high average sensitivity of 3.11 Ω/MPa. In conclusion, the dual bonding that combined Cu–Sn and Au–Au is extremely suitable for hermetic packaging in high-temperature graphene pressure sensors.