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This paper considers the problem of increasing the storage density in fault-tolerant VLSI systems which require only limited data retention times. To this end, the concept of storing many bits per memory cell is applied to area-efficient and fully logic-compatible gain-cell-based dynamic memories. A memory macro in 90-nm CMOS technology including multilevel write and read circuits is proposed and analyzed with respect to its read failure probability due to within-die process variations by means of Monte Carlo simulations.

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