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We present wafer bonding techniques applied for the first time in integrating GaAs-based distributed Bragg reflectors (DBRs) with InP-based active regions in optically pumped semiconductor disk lasers. The bonding procedures are performed at a modest temperature of 200°C and enable multiwatt output powers from 1.3 µm semiconductor disk lasers. These technologies are critical for vertical-cavity lasers emitting in the range 1.3-1.6 µm since monolithically grown lattice-matched InP structures suffer from DBRs with low refractive index contrast and poor thermal conductivity when compared with GaAs-based DBRs.Index Terms-Low temperature wafer bonding, molecular beam epitaxy (MBE), semiconductor disk laser (SDL).

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Optically pumped wafer fused 1310 nm VECSELs have the advantage of high output power and wavelength agility. Gain mirrors in these lasers are formed by direct bonding of InAlGaAs/InP active cavities to Al(Ga)As/GaAs DBRs. We present for the first time Watt-level 1310 nm wafer-fused VCSELs based on gain mirrors with heat dissipation in the "flip-chip" configuration. Even though output power levels in this approach is lower than with intra-cavity diamond heat-spreaders, the "flip-chip configuration demonstrates higher quality optical emission and is preferable for industrial applications in optical amplifiers, intra-cavity doubled lasers, etc.

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