N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 V/µm were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.

The CdSe-single-walled carbon nanotube (SWNT) hybrids are synthesized for measuring contact resistance between CdSe quantum dots and SWNTs in two hybrid samples, i.e., spray-deposited CdSe on SWNTs, and pyrene-self assembled CdSe on SWNTs. Currents are measured through indium-tin oxide (ITO), CdSe-SWNT hybrids and the tip of conductive AFM (c-AFM) with and without light at 532 and 655 nm.

In this work, we investigatethe field emission characteristics of carbon nanotube forest on three types substrate: (1) mirror polished, (2) chemically etched (large pattern) and (3) chemically etched (small pattern) Si substrate. The surface morphology of CNTs forest was characterized by scanning electron microscopy (SEM), surface chemical state and electronic structure phase analyzed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy.. Keywords: Field emission; carbon nanotube; chemical etched Si substrate. IntroductionThe Field emission (FE) properties of carbon nanotubes (CNTs) were influenced by several parameters such as density, length of CNTs, open/closed tip, defect and the morphology of substrate during synthesis. The change of FE properties of CNTs affected by density, length of CNTs, open/closed tip, defect has been reported by may research group [1~3]. However, a comparative measurement on FE properties of CNT forest which grown on substrate with different morphology by a CVD process is rarely reported. With this intension, this work reports on CNTs forest were synthesized through chemical vapor deposition (CVD) on silicon (Si) substrates with different structures under the same growth condition: (1) mirror polished, (2) chemically etched (large pattern) and (3) chemically etched (small pattern) Si substrate. The surface morphology of CNTs forest was characterized by scanning electron microscopy (SEM), surface chemical state and electronic structure phase analyzed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy.

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