Optical Properties and Field Emission of ZnO Nanorods Grown on p-Type Porous Si

Abstract

N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 V/µm were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.

Application of porous silicon microcavity to enhance photoluminescence of ZnO/PS nanocomposites in UV light emission

“…Zinc oxide (ZnO) is a Ⅱ-Ⅵ semiconductor with a wide gap (3.37 eV) and a large excitation binding energy (60 MeV) at room temperature (RT), which has attracted significant interests in the past few decades due to its unique properties and great potential for ultraviolet (UV) light emitters, optoelectronic devices, solar cells and chemical sensors [1][2][3][4]. Stable and strong luminescences of ZnO nanocrystals have been synthesized by means of vapor deposition (PVD), chemical bath deposition (CBD), electrochemical reaction, solvothermal methods [5][6][7][8], sol-gel method and organometallic synthesis, etc. Among those methods, sol-gel method draws increased interests because its low growth temperature, simplicity, potential for large-scale production and environmentally friendly processing.…”