K. A. Kovalevsky scite author profile

Stimulated donor and Raman Stokes emission has been achieved under intracenter excitation and photoionization of shallow donor centers in silicon. A pulsed laser emission of up to a few mW of peak power in the 1 -7 THz frequency range has been obtained at low temperatures ( < 30 K). Thorough laser characterization and further optimization of the laser threshold and efficiency has been carried out.

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K. A. Kovalevsky

Relaxation of excited donor states in silicon with emission of intervalley phonons

Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission

Effect of uniaxial stress on intervalley phonon-assisted relaxation of excited shallow-donor states in silicon

Erratum: Dynamics of nonequilibrium electrons on neutral center states of interstitial magnesium donors in silicon [Phys. Rev. B 94, 075208 (2016)]

Terahertz silicon lasers

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