The mechanical design of a completely bondless, pressure contact IGBT is discussed and its implications on the electrical characteristics are compared to those of a similarly rated module device. It is determined that the differences in the electrical characteristics of a pressure contact IGBT may offer certain advantages in some applications. INTRODUCTIONIt has been the conclusion of a number of independent studies [l-4 and others] that the long-term reliability of the module IGBT, in some applications, is still in question. Most of the identified failure mechanisms are associated with one of the many bonded joints, both wire and substrate, which occur in this type of construction. To overcome these potential failure modes a completely bond free pressure contact IGBT package has been developed, along with specially designed chips, which have been optimised for operation under pressure contact.

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