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This paper reviews the development of the MOS-FET model (Xsim), for unification of various types of MOS devices, such as bulk, partially/fully-depleted SOI, doublegate (DG) FinFETs and gate-all-around (GAA) siliconnanowires (SiNWs), based on the unified regional modeling (URM) approach. The complete scaling of body doping and thickness with seamless transitions from one structure to another is achieved with the unified regional surface potential, in which other effects (such as those due to poly-gate doping and quantum-mechanical) can be incorporated. The unique features of the Xsim model and the essence of the URM approach are described.

The structure of electrochemical intermediates of methanol oxidation on platinum in aqueous sulfuric acid has been investigated under steady state conditions using polarization modulation Fourier transform infrared reflection absorption spectroscopy. Terminally bonded CO and bridge‐bonded CO are observed in the cathodic to anodic sequence. However, only bridge‐bonded CO is observed in the anodic to cathodic sequence. The conventionally assumed C‒O‒H group was not observed. The spectroscopic results are compared with similar information obtained by means of radiotracer and potentiodynamic techniques. A new mechanism is proposed which is intended to apply to the steady‐state situation and may differ from that pertaining to potential sweep data.

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