In this letter, we report on the record performance of GaAs-based heterostructure barrier varactors (HBVs) in tripler circuits. Both fabrication technique of planar Al 0 7 Ga 0 3 As/GaAs heterostructure barrier varactors (HBVs) and measurements of a corresponding tripler circuit are presented. Planar transmission lines on a thin dielectric membrane and flip-chip technique without air bridges provide reduced parasitic losses and, hence, higher tripler efficiency. Frequency tripler measurements have shown more than 1 mW at 450 GHz.Index Terms-Frequency tripler, heterostructure barrier varactor (HBV), THz-technology.

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