No abstract

The effects of thermally accelerated ageing in irradiated and unirradiated 1310nm InGaAsP edge-emitting lasers and InGaAs p-i-n photodiodes are presented. 40 lasers (20 irradiated) and 30 photodiodes (19 irradiated) were aged for 4000 hours at 80°C. Periodic measurements were made of laser threshold and efficiency, and p-i-n leakage current and photocurrent.There were no sudden failures and there was very little wearout related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the CMS Tracker despite being exposed to a harsh radiation environment.