A scanning electron microscope is employed for the investigation of charging on different cuts of an α-SiO2. A method for the determination of trapped charges is proposed. Charging on different cuts is observed to decrease in the order of z cut, 30° cut, 45° cut, and 60° cut of the α-SiO2. This phenomenon is related to permittivity, defect density, and stress of the samples. Details of the experiments and the method of charge determination are given.

We introduce an ab initio molecular-dynamics method based on the discretized path-integral representation of quantum particles. Fermi statistics is automatically generated by an effective exchange potential. This path-integral molecular-dynamics method is able to simulate electron plasmas at the border of the degenerate and the semidegenerate regimes with a satisfactory level of accuracy. Application of the method to the simulation of a liquid alkali metal demonstrates its potential in the simulation of real systems from first principles. ͓S0163-1829͑98͒00436-6͔ PHYSICAL REVIEW B 15 SEPTEMBER 1998-II VOLUME 58, NUMBER 12 PRB 58 0163-1829/98/58͑12͒/7577͑8͒/$15.00 7577

Using the scanning electron microscope we have investigated the physical parameters determining the size effect of various dielectric samples submitted to a surface electric field. It is shown that the size effect is a function of the static permittivity and of the space charge distribution. The results are explained by the consideration of charge diffusion and polarization relaxation processes resulting from the space charge formation. A one-dimensional mathematical model has also been used to describe space charge distribution. The findings were consistent with the experimental observations.

Physical properties and microelectronic applications of low permittivity fluoromethylene cyanate ester resins

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