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Focused ion beam system has been widely used as a critical failure analysis tool as microprocessor technology advances at a ramping speed. It has become an essential step in failure analysis to reveal physical defects post electrical fault isolation. In this highly competitive and challenging environment prevalent today, failure analysis throughput time is of utmost important. Therefore quick, efficient and reliable physical failure analysis technique is needed to avoid potential issues from becoming bigger. This paper will discuss the applications of FIB as a defect localization and root cause determination tool through the passive charge contrast technique and pattern FIB analysis.

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A breakthrough approach was developed in which failure analysis (FA) of advanced microprocessor was carried out without the use of defect localization equipment. This technique enables the reading of internal signal value without the use of any physical probing method. This method demonstrates the same FA capability with higher success rate and shorter analysis time.