Characteristics of high-voltage dual-metal-trench (DMT) SiC Schottky pinch-rectifiers are reported for the first time. At a reverse bias of 300 V, the reverse leakage current of the SiC DMT device is 75 times less than that of a planar device while the forward bias characteristics remain comparable to those of a planar device. In this work, 4H-SiC pinch-rectifiers have been fabricated using a small/large barrier height (Ti/Ni) DMT device structure. The DMT structure is specially designed to permit simple fabrication in SiC. The Ti Schottky contact metal serves as a self-aligned trench etch mask and only four basic fabrication steps are required.

No abstract

No abstract

We have fabricated tungsten-diamond-like-nanocomposite (W-DLN) Schottky contacts on n-type and p-type 6H SiC (Si-face). The as-deposited n-type and ptype contacts are rectifying and measurement results suggest that the electrical characteristics are dominated by the properties of the tungsten SiC interface. The n-type contacts have a reverse leakage current density of 4.1 x 10 -3 Acm -2 and the p-type contacts have a reverse leakage current density of 1.4 x 10 -7 Acm -2 at -10 V. The n-type contacts have an current-voltage (I-V) extracted effective r of 0.7 eV with an ideality factor of 1.2 and a capacitance-voltage (C-V) extracted 0Bn of 1.2 eV. The p-type contacts have an I-V extracted effective 9 of 1.8 eV with an ideality factor of 1.7. Non-ideal I-V and C-V characteristics may be due to surface damage during W-DLN deposition.

No abstract