A dual-metal-trench Schottky pinch-rectifier in 4H-SiC

Schoen, K.J.; Henning, J.P.; Woodall, J. M.; Cooper, James A.; Melloch, M. R.

doi:10.1109/55.663526

Cited by 55 publications

(25 citation statements)

References 8 publications

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“…In order to reduce the reverse leakage current of SiC SBDs, various methods have been proposed through the years [116,[124][125][126][127][128][129][130][131][132][133][134][135][136][137][138][139][140][141]. These include the Junction Barrier Schottky In Table 6, various structures reported to reduce the reverse leakage current and increase on-off current ratio of the SBD are listed through recently years.…”

Section: Hybrid Structures For Leakage Current Reductionmentioning

confidence: 99%

“…(The only exception is if the MPS diode has its P + -n junction forward biased, injecting minority carriers and modulating the drift layer conductivity.) The amount of increase in forward voltage drop is a function of relative area of the P + regions to the total active device area [116,124]. The smaller the relative area of the P + regions, the less penalty on the forward voltage drop will incur.…”

Section: F = V Sb + I F (R Grid + R Dr + R Sub + R Conma ) (19)mentioning

confidence: 99%

“…16 normally dominates. The increase of forward voltage, which arises from R grid , will only be a small percentage of the total forward voltage drop [116,124].…”

Section: F = V Sb + I F (R Grid + R Dr + R Sub + R Conma ) (19)mentioning

confidence: 99%

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Silicon Carbide Schottky Barrier Diode

Zhao

Sheng

Lebron-Velilla

2005

Int. J. Hi. Spe. Ele. Syst.

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This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

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Section: Hybrid Structures For Leakage Current Reductionmentioning

confidence: 99%

Section: F = V Sb + I F (R Grid + R Dr + R Sub + R Conma ) (19)mentioning

confidence: 99%

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Silicon Carbide Schottky Barrier Diode

Zhao

Sheng

Lebron-Velilla

2005

Int. J. Hi. Spe. Ele. Syst.

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“…In the past, several vertical Schottky rectifier structures on SiC have been reported [2]- [5] with improved reverse characteristics due to the suppression of the barrier lowering effect which is the primary cause of the increased reverse leakage current in the SiC Schottky rectifiers. However, lateral Schottky rectifiers are increasingly becoming important because of their application in power ICs.…”

Section: Introductionmentioning

confidence: 99%

A new 4H-SiC lateral merged double Schottky (LMDS) rectifier with excellent forward and reverse characteristics

Singh¹,

Kumar

2001

IEEE Trans. Electron Devices

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The novel characteristics of a new Schottky rectifier structure, known as the lateral merged double Schottky (LMDS) rectifier, on 4H-SiC are explored theoretically and compared with those of the compatible conventional 4H-SiC Schottky rectifiers. The anode of the proposed lateral device utilizes the trenches filled with a high barrier Schottky (HBS) metal to pinch off a low barrier Schottky (LBS) contact during reverse bias. Numerical simulation of any such SiC structure is complicated by the fact that the thermionic emission theory predicts the reverse leakage current to be orders of magnitude smaller than the measured data. We, therefore, first propose a simple empirical model for barrier height lowering to accurately estimate the reverse leakage current in a SiC Schottky contact. The accuracy of the empirical model is verified by comparing the simulated reverse leakage current with the reported experimental results on different SiC Schottky structures. Using the proposed empirical model, the two-dimensional (2-D) numerical simulations reveal that the new LMDS rectifier demonstrates about three orders of magnitude reduction in the reverse leakage current and two times higher reverse breakdown voltage when compared to the conventional lateral low barrier Schottky (LLBS) rectifier while keeping the forward voltage drop comparable to that of the conventional LLBS rectifier. A unique feature of the 4H-SiC LMDS rectifier is that it exhibits a very sharp PiN diode-like reverse blocking characteristic in spite of the fact that only Schottky junctions are used in the structure. The reasons for the improved performance of the LMDS rectifier are analyzed and design tradeoff between the forward voltage drop and the reverse leakage current is provided by varying the device parameters. Finally, this work demonstrates a simple way of achieving excellent Schottky characteristics on 4H-SiC and provides the incentive for experimental exploration.Index Terms-Silicon carbide, numerical simulation, lateral Schottky, barrier lowering. Pradesh. He received the B.S. degree in engineering from the Aligarh Muslim University, Aligarh, in 1989, and the M.Tech. degree from the University of Roorkee, Roorkee, in 1991, where he was awarded the Gold Medal for standing first in the M. Tech. program. He is currently pursuing the Ph.D. degree

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“…However, the major inherent disadvantage of Schottky rectifiers is the high reverse leakage current density, when compared to the PiN junction rectifiers. In order to achieve a low leakage current density while maintaining good forward characteristics, hybrid rectifiers, such as the junction barrier Schottky (JBS) and dual metal trench (DMT) Schottky rectifiers, have been explored in SiC [4], [5]. Although these devices operate with different principles in the forward region, the design concepts used to reduce reverse leakage current are similar.…”

mentioning

confidence: 99%

A fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier

Khemka

Ananthan

Chow

2000

IEEE Electron Device Lett.

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A fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier has been designed, fabricated and characterized for the first time. The use of a TMBS structure helps improve the reverse leakage current by more than three orders of magnitude compared to that of a planar Schottky rectifier. We have achieved a low reverse leakage current density of 6 10 6 A/cm 2 and a low forward voltage drop of 1.75 V at 60 A/cm 2 for the TMBS rectifier. The static current-voltage (I-V) and switching characteristics of the TMBS rectifier have been measured at various temperatures. A barrier height of 1.0 eV and an ideality factor of 1.8 were extracted from the forward characteristics. The switching characteristics do not change with temperature indicating the essential absence of stored charge.

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A dual-metal-trench Schottky pinch-rectifier in 4H-SiC

Cited by 55 publications

References 8 publications

Silicon Carbide Schottky Barrier Diode

Silicon Carbide Schottky Barrier Diode

A new 4H-SiC lateral merged double Schottky (LMDS) rectifier with excellent forward and reverse characteristics

A fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier

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