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By using a newly-developed computer-controlled infrared polariscope, strain-induced birefringence has been measured to characterize residual strain in thin LEC-grown GaAs (100) wafers. It is found that the residual strain profile exhibit fourfold symmetry and the maximum value attains to the order of N lov4. EPD profile has been also measured to explore a correlation between the residual strain and EPD. A model is proposed to explain the correlation between the residual strain and EPD profiles, which is found fairly to explain the present experimental results.

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