Quantitative photoelastic characterization of residual strain and its correlation with dislocation density profile in semi-insulating LEC-grown GaAs wafers

Abstract

By using a newly-developed computer-controlled infrared polariscope, strain-induced birefringence has been measured to characterize residual strain in thin LEC-grown GaAs (100) wafers. It is found that the residual strain profile exhibit fourfold symmetry and the maximum value attains to the order of N lov4. EPD profile has been also measured to explore a correlation between the residual strain and EPD. A model is proposed to explain the correlation between the residual strain and EPD profiles, which is found fairly to explain the present experimental results.

Strain issues on III–V compound semiconductors - imaging of strain distribution and crystal growth

“…The SIRP maps were obtained in large-diameter substrates of VGFand VCZ-grown 4".p Fe-doped InP and they reflected the difference of the thermal history during crystal growth [11]. Besides InP substrates, we have also investigated various commercial substrates of GaAs [12][13][14] and GaP [15][16][17][18]. The slip-lines and strain-increase caused by thermal processes were also investigated in GaAs [19][20][21][22] and Si [23] substrates.…”