Residual strain mapping in III–V materials by spectrally resolved scanning photoluminescence

Buchheit, M.; Khoukh, A.; Bejar, M.; Krawczyk, Stanisław; Blanchet, R.

doi:10.1016/s0026-2692(99)00007-5

Cited by 6 publications

(2 citation statements)

References 14 publications

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“…It should be pointed out, that the values of dislocation density are not those in the final crystal, but only the fully grown crystal at the end of the growth period, with the cooling down period still remaining. Figure 7 shows a KOH etched LEC grown GaAs (001) wafer from the work of Buchheit et al [25]. The etch-pit configuration in this figure is similar to that of slice as in figure 6.…”

Section: A Sample Casementioning

confidence: 97%

Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H₂ Plasma Treatment

Liu

Chang

Mor

et al. 1999

Jpn. J. Appl. Phys.

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The visco-plastic model developed in part I of this work is used here to study the dislocation evolution in high pressure Czochralski growth of InP single crystals. Towards this an in-house computational fluid dynamics code MASTRAPP is linked to the ABAQUS software. MASTRAPP has the capability to predict the thermal field history in the Czochralski furnace throughout the growth period. The thermal loading history determined through MASTRAPP is fed to ABAQUS and the visco-plastic constitutive equations are integrated while maintaining force equilibrium in the growing crystal. The combined model predicts the final dislocation densities in the crystal at the end of the growth period. It is then used to study and predict the effect of various parameters and phenomena on the final dislocation densities-thermal shock, gas convection, height of boric oxide encapsulant layer, marginal roles of thermal radiation and melt convection, and the cool down period. Gas convection is found to have the most significant effect on the dislocation densities.

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Section: A Sample Casementioning

confidence: 97%

Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H₂ Plasma Treatment

Liu

Chang

Mor

et al. 1999

Jpn. J. Appl. Phys.

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“…As is well known, the deformation of the crystal lattice modifies the electronic band structure by changing thereby the band gap energy. [59][60][61] The slope of the absorption edge of ZnDDT 160 and ZnDDT 3, Fig. 7, is characteristic of materials with a certain degree of crystal lattice disorder.…”

Section: Band Gap Energiesmentioning

confidence: 99%

Temperature and time dependence on ZnS microstructure and phases obtained through hydrothermal decomposition of diethyldithiocarbamate complexes

Siqueira

Matencio

Silva

et al. 2013

Phys. Chem. Chem. Phys.

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Zinc sulphide was obtained through hydrothermal decomposition of [Zn(S2CNEt2)] under different experimental conditions such as temperatures and reaction times. Hydrothermal reactions were carried out in a stainless steel autoclave at 160, 180 and 200 °C for 3, 6 and 24 hours. The obtained products were characterized using X-ray diffraction, scanning and high resolution transmission electron microscopies. Particle size and microstrain were determined by Rietveld refinement of experimental X-ray diffraction patterns. The obtained crystal size values were in the range of 6.1 to 30 nm and as the temperature and reaction times increase the particle size also increases. Band gap values are in the range of 3.34 to 3.60 eV and are highly dependent on the crystal microstrain. The catalyst activities were studied through the degradation of methylene blue dye solutions under ultraviolet radiation.

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Models for Stress and Dislocation Generation in Melt Based Compound Crystal Growth

Prasad

Pendurti²

2010

Springer Handbook of Crystal Growth

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Residual strain mapping in III–V materials by spectrally resolved scanning photoluminescence

Cited by 6 publications

References 14 publications

Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H₂ Plasma Treatment

Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H₂ Plasma Treatment

Temperature and time dependence on ZnS microstructure and phases obtained through hydrothermal decomposition of diethyldithiocarbamate complexes

Models for Stress and Dislocation Generation in Melt Based Compound Crystal Growth

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Residual strain mapping in III–V materials by spectrally resolved scanning photoluminescence

Cited by 6 publications

References 14 publications

Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H2 Plasma Treatment

Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H2 Plasma Treatment

Temperature and time dependence on ZnS microstructure and phases obtained through hydrothermal decomposition of diethyldithiocarbamate complexes

Models for Stress and Dislocation Generation in Melt Based Compound Crystal Growth

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Product

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Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H₂ Plasma Treatment

Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H₂ Plasma Treatment