Models for Stress and Dislocation Generation in Melt Based Compound Crystal Growth

Prasad, V.; Pendurti, S.

doi:10.1007/978-3-540-74761-1_39

Cited by 3 publications

(3 citation statements)

References 88 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Also the interplay with point defects, i.e. dislocation climb, is not considered in the AH model [60]. Totally new mathematical concepts are required when the 3D dislocation dynamics, such as bunching and network generation, needs to be described numerically [61] (see section 6.2).…”

Section: ( )mentioning

confidence: 99%

Fundamentals and engineering of defects

Rudolph

2016

Progress in Crystal Growth and Characterization of Materials

View full text Add to dashboard Cite

Section: ( )mentioning

confidence: 99%

Fundamentals and engineering of defects

Rudolph

2016

Progress in Crystal Growth and Characterization of Materials

View full text Add to dashboard Cite

“…The advantage of this approach is that the final dislocation density and the state of the as-grown crystal are functions of the initial conditions of the crystal and the entire growth and cooling temperature histories. 45) This approach can also be used to estimate the residual stress in a cooled crystal. A viscoplastic model called the Haasen-Alexander-Sumino (HAS) model is introduced.…”

Section: Analysis Of Dislocation Density In Silicon Crystalsmentioning

confidence: 99%

“…Many experiments and simulations on the contamination of heavy metals have been reported so far. [33][34][35][36][37] Many experiments 17,[38][39][40][41] and numerical simulations [42][43][44][45] intended to improve the purity of grown crystals have been reported thus far. The carbon and oxygen concentrations in multicrystalline silicon crystals can be affected by a specially designed gas flow system.…”

Section: Introductionmentioning

confidence: 99%

Silicon bulk growth for solar cells: Science and technology

Kakimoto

Gao

Nakano

et al. 2017

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The photovoltaic industry is in a phase of rapid expansion, growing by more than 30% per annum over the last few decades. Almost all commercial solar cells presently use single-crystalline or multicrystalline silicon wafers similar to those used in microelectronics; meanwhile, thin-film compounds and alloy solar cells are currently under development. The laboratory performance of these cells, at 26% solar energy conversion efficiency, is now approaching thermodynamic limits, with the challenge being to incorporate these improvements into low-cost commercial products. Improvements in the optical design of cells, particularly in their ability to trap weakly absorbed light, have also led to increasing interest in thin-film cells based on polycrystalline silicon; these cells have advantages over other thin-film photovoltaic candidates. This paper provides an overview of silicon-based solar cell research, especially the development of silicon wafers for solar cells, from the viewpoint of growing both singlecrystalline and multicrystalline wafers.

show abstract

Numerical Analysis of Impurities and Dislocations During Silicon Crystal Growth for Solar Cells

Gao

Kakimoto

2015

Defects and Impurities in Silicon Materials

View full text Add to dashboard Cite

Models for Stress and Dislocation Generation in Melt Based Compound Crystal Growth

Cited by 3 publications

References 88 publications

Fundamentals and engineering of defects

Fundamentals and engineering of defects

Silicon bulk growth for solar cells: Science and technology

Numerical Analysis of Impurities and Dislocations During Silicon Crystal Growth for Solar Cells

Contact Info

Product

Resources

About