No abstract

A process technology for a pseudomorphic high electron mobility transistor (P-HEMT) with an offset-gate structure has been developed for millimeter-wave monolithic microwave ICs (MMICs). A HEMT with the offset-gate structure showed both reduced gate-to-drain capacitance and drain conductance compared with a device with a non-offset-gate structure. The device showed a maximum available gain (MAG) of 9 dB at 77 GHz. The device was applied to a 77 GHz three-stage power amplifier, which showed a small-signal gain of 16.5 dB. Under preliminary life testing, this amplifier showed a stable small-signal gain for over 160 hours of testing at 175°C.

No abstract

The GaAs MMIC chip set consisting of SPDT switch, low noise amplifier, power amplifier, AGC amplifier, up-converter and down converter has been developed to meet the specifications for 1.9GHz PHS front-end.The low noise amplifier and power amplifier achieve noise figure of 2.2dB and power added efficiency of 30%, respectively. The SPDT switch employs new circuit configuration with feedback capacitors, and achieved P l d B of 30dBm. The up-converter employs single mixer, which suppresses local signal leakage to 29dBc. The down-converter employs a single mixer using dual gate FET, to reduced DC power dissipation.

No abstract