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Porous silicon (PS) fabrication, changes in the optical properties and surface modi¯cation in the oxidized PS (dipped into the Glucose oxide) due to the in¯ltration of biomolecules using Luminescence Spectrophotometer [Photoluminescence (PL)], Fourier Transform Infrared Spectroscopy (FTIR), and Scanning Electron Microscope (SEM) were studied. The surface morphology of oxidized PS (OPS) and treated with Glucose have been studied by SEM. Spontaneous imbibition weight was calculated theoretically using imbibition equation for the porous medium using glucose solution as the wetting liquid. FTIR analysis revealed that, the strong Si-H, Si-O-Si bonds which covered most of the OPS surface. In the glucose treated PS layer, the amide I (C¼O) stretch and amide II (C¼N) stretch (1690 cm À1 and 1551 cm À1 Þ groups were appeared in the spectrum which con¯rmed the coupling reaction. E±cient visible Photoluminescence was obtained at around 624 nm from glucose treated porous silicon. The functionalization of glucose with nano structured PS, changes light emission over the surface of OPS. It can be applied in optical biosensor and which can be used in biomedical applications.

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We fabricate the heterojunction device by filling Porous Silicon (PS) with Polystyrene and Polyvinylchloride (PVC) in the present investigation. The rectifying characteristics of the Al/PS/c-Si/Al and Al/Polymers/PS/c-Si/Al were measured. Analyses of the structural properties using SEM and AFM have demonstrated that the PS layer filled with polymers have no significant changes in the structures except that the polymers were infiltrated in the pores. The refractive index values of the PS and Polymers/PS composites as a function of porosity were determined by Effective Medium Approximation (EMA) method.The Photoluminescence (PL) of the structures at room temperature showed that the emission intensity was very high as compared with that of the polymer films on PS layer. The PL peak in polymers/PS composites structures were not caused any blue shift of the PL peak energy. The band gap energy of PS device was determined from PL. This heterojunction device, especially due to charge storage in PS surface, which will be useful in sensor applications and diode in addition, it also possesses potential applications in the optoelectronic fields.