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Heat-assisted magnetic recording (HAMR), also known as hybrid recording, has been proposed to enable storage densities greater than 1 Tb/in 2 in hard disc drives while circumventing the superparamagnetic limit. Light is delivered in the near field to the recording medium to heat just the spot which is to be recorded. Techniques based on apertures, antennas, waveguides, and solid immersion lenses have been suggested for delivering substantial amounts of optical power into subwavelength spots in the near field. A practical transducer for HAMR may require a combination of techniques.

As new, advanced high-k dielectrics are being developed to replace SiO2 in future generations of microelectronics devices, understanding their etch characteristics becomes vital for integration into the manufacturing process. We report on the etch rates and possible mechanisms for one such dielectric, Zr1−xAlxOy (x≈0.2), in plasmas containing a mixture of Cl2 and BCl3, as a function of gas composition and ion impact energy. Higher concentrations of BCl3 enhance the etch rate as well as selectivity of Zr1−xAlxOy etching as compared to the etching of α-Si, whereas increasing ion energy increases the etching rates but decreases selectivity. In a high density helical resonator plasma, etching rates on the order of 700 Å/min and 1:1 selectivity are typical. Angle-resolved x-ray photoelectron spectroscopy was used to study the composition of the upper ∼30 Å of the film, before and at the end of the etching process. We found that the etching rate of Zr1−xAlxOy does not change with time for the range of Cl2/BCl3 ratios and ion energies investigated, whereas the α-Si etching rate in pure BCl3 plasma and at zero substrate bias decreases with time, due to the formation of a B–Si film on the surface.