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In the competitive global business environment, enterprises should effectively respond to and satisfy customer needs. Outsourcing manufacturing is an effective method of adjusting the flexibility of production capability. To ensure final product quality, evaluating and selecting a contract manufacturer is essential. Process capability indices are extensively adopted in manufacturing to determine whether a process meets capability requirements. This study attempts to determine the score index R i and then apply it to assess the process performance of contract manufacturer by using the process incapability index C pp . The formulae for C pp and R i are simple to understand and to apply. The procedure developed in this paper is also an easy and convenient tool for practitioners to assess contract manufacturer quality performance and make more reliable decisions regarding contract manufacturer.

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This study investigates electrical characteristics and the formation mechanism of the Cu/Ge/Pd Ohmic contact to n-type InGaAs. After annealing the contact at 250°C for 20 min, Cu 3 Ge and Pd 12 Ga 5 As 2 compounds formed and Ge diffused into the InGaAs layer, achieving a heavily doped InGaAs layer with a low contact resistivity of 1 9 10 À6 X cm 2 . Thermal stability tests were performed on the Cu/Ge/Pd Ohmic contact to InGaAs after Ohmic contact formation, showing no obvious degradation after a 72 h reliability test at 250°C. The results indicate excellent electrical characteristics and thermal stability using Cu/Ge/Pd as an Ohmic contact metal to an n-InGaAs layer.

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