We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA(240*320) resolution.

We developed a 4 inch (QVGA, 320x240, 262,144 colors) amorphous silicon thin-film transistor liquid-crystal display (TFT-LCD) with an embedded color image scanner. With this panel, it is possible to get a copy of photo or document and to display it on the screen itself. The sensing device and display device are fabricated by the conventional a-Si processes at the same time. We focused on making the thinner panel to get better quality of image obtained from scanning.

The distortion of electric field and abnormal light transmission characteristics due to foreign particles were studied in IPS and TN mode TFT LCD. The dielectric and ionic particles with varying sizes were considered for the simulation according to their electric characteristics. The simulation shows that the foreign particle introduced into a pixel changes the electric fields within a pixel and affects the light transmission characteristics of the pixel. In both TN and IPS mode TFT LCD, the presence of the ionic particle affects the light transmittance a great deal.