Although CT findings of pulmonary tuberculosis and MAI are similar, interlobular septal thickening is more common in patients with tuberculosis and bronchiectasis is more common and more extensive in patients with MAI.

Practical selectivity window of selective epitaxial growth (SEG) using a H 2 /SiH 4 /Cl 2 cyclic chemical vapor deposition (CVD) system has been investigated with the batch-type vertical furnace equipment, replacing a conventional single-wafer H 2 /dichlorosilane/HCl CVD system. The process temperature was less than 700 • C, which is suitable for a low thermal budget process applicable to next-generation memories including vertical pn-diode switches. Selectivity loss is quantified by an in-line inspection tool to determine the practical number of selectivity losses. The H 2 /SiH 4 /Cl 2 cyclic CVD system provides an excellent capacity of 40 wafers per batch. Selectivity loss, which is one of the most crucial features in the SEG process for the diode application, is controlled with both the amount of SiH 4 and Cl 2 and the period of gas supply, and the practical number of selectivity loss is confirmed to be less than 100 in 200 mm wafers. Without high temperature annealing in hydrogen ambient, low temperature cyclic SEG in the batch reactor ensures the clean interface and improved crystalline quality of SEG-Si, as well as high throughput.