A new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested in this work. The method is based on a combination of the algorithmic capabilities of the analytical and Monte-Carlo simulation methods. The Monte-Carlo method was used to generate a three-dimensional point response distribution function for the given implantation conditions. Using the numerically generated point response and an efficient algorithm for 3D convolution a point response based interface between the Monte-Carlo and analytical simulation methods was established. The combined simulation approach is able to accurately account for the channeling effect which is especially strong in case of a normal implantation into crystalline silicon. The combined simulation approach was implemented in the software for three-dimensional simulation of ion implantation and showed a reduction of the simulation time by a factor 10 and more compared to full scale Monte-Carlo simulation without sacrificing the simulation accuracy

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This paper outlines activities carried out at FhG-IIS-B and FhG-ISiT on the development of algorithms and physical models required for the accurate threedimensional simulation of topography and doping steps in semiconductor technology. The three-dimensional process simulation modules are being developed as parts of the SOLID and the PROMPT process simulation systems.