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The results of a wet alkaline seed deposition process directly on a thin adhesion promoter film, such as chemical vapor deposition ͑CVD͒ Co, are presented. This solution has been successfully used for copper plating on blanket and patterned through-silicon-via ͑TSVs͒ wafers covered with either silicon oxide/physical vapor deposition ͑PVD͒ Ta/CVD Co or silicon oxide/PVD Ti/CVD Co stacks. Such direct plated films were used as seed layers for subsequent copper plating from an in-house-made acidic Cu bath with model additives poly͑ethylene glycol͒ ͑PEG͒, bis͑3-sulfopropyl͒ disulfide ͑SPS͒, and Janus Green B ͑JGB͒. We report the impact of the directly plated stack composition and thicknesses on the integration of the wet alkaline seed in TSVs with 5 m width and high aspect ratio ͑HAR͒ as high as 8:1. The conformal wet seed layer enables the achievement of a successful void-free filling using an in-house made acidic Cu bath with model additives ͑SPS, PEG, and JGB͒.

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