The crystallization of thin silicon films at temperatures between 425 and 600°C was investigated on glass substrates coated with Al-doped zinc oxide (ZnO:Al). Bare ZnO:Al layers degrade at the crystallization temperatures used. A silicon layer on top, however, efficiently prevents deterioration. The resistivity was even found to drop from 4.3×10−4Ωcm for the as deposited ZnO:Al to 2.2×10−4Ωcm in the case of aluminium induced crystallization and to 3.4×10−4Ωcm for solid phase crystallization. The temperature-stable conductivity of ZnO:Al films coated with Si opens up appealing options for the production of polycrystalline silicon thin-film solar cells with transparent front contacts.

For a case study of environmental contamination, radiochemical activation analysis has been applied to the crucians collected in the Han River. Sixteen trace elements (Hg, Cd, As, Br, Cu, Na, K, Se, Cr, Hf, Rb, Fe, Zn, Co, La, and Cs) were separated into three groups using distillation and diethyldithiocarbamate extraction methods, and their contents were determined by a single comparator method. Compared with the values 15 years ago, the values for mercury and cadmium have been drastically decreased at the middle and lower part of the river, but no typical change is found in other elements.