The realisation of a fully vertical gallium nitride (GaN)-on-silicon (Si) Schottky barrier diode (SBD) without using wafer bonding and Si substrate removal process is reported. The SBD presented a turn-on voltage of 0.69 V at 1 A/cm 2 , breakdown voltage of 148 V with a specific on-resistance of 13.9 mΩ cm 2. The ideality factor and Schottky barrier height were 1.35 and 0.71 eV, respectively. An effective critical electric field was estimated to be 1.48 MV/cm. The Baliga's figure of merit for the SBD was calculated to be 1.57 MW/cm 2. These results indicate the great potential of GaNon-Si in achieving cost-effective fully vertical power device.

La(2-x)SrxCu04 is unique among the high Tc superconductors with high values of Seebeck coefficient in the normal state for x < 0.1 , in addition to a low thermal conductivity. Seebeck coefficient and electrical conductivity were measured for samples of sintered and single crystal Lal.95Sr0.05CuO4 in order to look for the optimum concentration of Sr as related to its thermoelectric properties at room temperature. At this doping level this material is in the region of metal-insulator transition. Room temperature values of 147 pV/K and 0.01 Qcm for the Seebeck coefficient and the electrical resistivity, respectively, were obtained for a sintered sample.For a single crystal of the same composition, the Seebeck coefficient parallel to the ab planes is 143 pV/K and along the c axis it is 156 pV/K. The electrical resistivity was measured only along the ab planes, down to about 9K. The R.T. value was 0.03 Qcm. No significant change was observed after annealing , either in oxygen or in vacuum. There is a significantly different behavior of the temperature dependence of the resistivity between the sintered and single crystal samples: the sintered sample has a metallic behavior from room temperature down to 80K, and there is no superconducting transition above 10K -whereas the single crystal shows semiconducting behavior from R.T. down to the superconducting transition with an onset temperature of 17K (along the lower resistivity ab planes). Our data are compared with published data of different values of x in the system La(2-x)SrxCu04. Introduction: