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In order to investigate the noise impacts of wind turbines with a high single-machine capacity (2 MW) on the residents living around, a face-to-face questionnaire survey was conducted. The moderating factors of noise annoyance, noise exposure-response relationships as well as noise impacts on sleep and self-reported health were investigated. Results showed that noise sensitivity, attitude towards wind turbines' visual impact on the landscape, general opinion on wind turbines and noise intensity had statistically significant impacts on annoyance due to wind turbine noise. Compared with wind turbines with lower single-machine capacity in relevant studies, those with higher single-machine capacity in this study induced higher annoyance at the same L den , which was relative to the visibility of wind turbines, background noise levels of wind farm area, etc. Noise sensitivity, noise annoyance and noise intensity, which had no significant correlation with self-reported health effects, were statistically significantly correlated with sleep disturbance on respondents.

The InGaAs finger-interdigitated metal-semiconductor-metal photodetector (MSM-PD) is potentially the most promising candidate for ultrafast photodetectors for the wavelength range 1.3-1.55 m and long-haul optical fiber communication systems and interconnects. It has many advantages over p-i-n structures, such as low parasitic capacitance, wide bandwidth, planar structure, and simple fabrication, as well as compatibility with field-effect transistors (FETs).An MSM-PD consists essentially of two back-to-back Schottky diodes realized in practice by an interdigitated electrode pattern. Its performance is critically dependent on the quality of the Schottky contact. The fabrication of photodetectors for the long-wavelength range using the InGaAs-InP material system is complicated by the relatively low Schottky barrier height (ϳ0.2 eV) on InGaAs. This results in large leakage currents and low breakdown voltages. In order to overcome these problems, investigations on InGaAs MSM-PDs have been focused on devices with additional epitaxial cap layers having a larger bandgap than InGaAs. Such layers, which serve to enhance the Schottky-barrier height, have been grown using materials both latticematched and lattice-mismatched to InGaAs with a typical thickness of several hundred angstroms. Many barrier-enhancement material systems have been investigated, such as lattice-matched In 0.52 Al 0.48 As, 1,2 Fe-doped 3,4 or undoped InP, 5-9

We describe a system demonstrator based on vertical-cavity surface-emitting lasers, metal-semiconductor-metal detectors, printed circuit board (PCB) level optoelectronic device packaging, a compact bulk optical relay, and novel barrel/PCB optomechanics. The entire system was constructed in a standard VME electrical backplane chassis and was capable of operating at >1.7 Gbit/s of aggregate data capacity. In addition to the component technologies developed, we describe operational testing and characterization of the demonstrator.

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