An ultralow specific on-resistance (Ron,sp) accumulation-mode LDMOS (ALDMOS) is proposed and investigated by simulations and experiments. The proposed ALDMOS features two separated integrated diodes (SID) above the N-drift surface, which forms high density electron accumulation layer in the on-state. Meanwhile, the SID not only assists depleting the N-drift to increase the N-drift doping centration (Nd) in the off-state, but also modulates the lateral electric field to improve the breakdown voltage (BV). Thus, the proposed SID ALDMOS could achieve ultralow Ron,sp and maintain high BV simultaneously. The layout and key fabrication processes of the SID ALDMOS are demonstrated. The measured results show that the SID ALDMOS realizes a BV of 483V and Ron,sp of 29.3mΩcm 2 , with a high FOM value of 7.96MW/cm 2 . Its Ron,sp is decreased by 33.7% compared with triple RESURF LDMOS at the same BV.

No abstract

No abstract