In this paper, a simulation of a photovoltaic–thermal (PV/T) hybrid solar system with longitudinal fins absorbers was developed to determine optimal geometry parameters for conventional design of this system. In this case, we used a dynamic model based on the principle of the airflow rate to determine the optimum design of the PV/T system for each airflow velocity. In this regard, the influences of the geometric parameters (number, height) on the collector performance of each model with different flow velocities were investigated. The mathematical model is developed using the energy balance equations of the PV/T air collector. A good agreement is obtained between the simulation results and the reference data from the literature after the system PV/T air collector is evaluated by calculating the root mean square error. The studied cases indicate that for the four simulated models, the best highest performance rate is providing with the first model at 2[Formula: see text]m/s airflow velocity. The thermal and electric efficiencies were reached 83% and 12.85%, respectively, with the maximum temperature value on the photovoltaic cell as [Formula: see text]C. However, a combined efficiency for the hybrid PV/T solar collector, which is the sum of the electrical efficiency and thermal efficiency, is equal to 95.98%.

This work presents additional physical results about the enhancement of the photoluminescence property of hybrid structures using single walled carbon nanotubes/pyramidal porous silicon surface, in comparison with what has already been published on these structures in terms of synthesis conditions and FTIR investigations as reported recently by the same authors in Journal of Alloys and Compounds 694 (2017) 1036 1044. Herein, the effect of the single walled carbon nanotubes (SWCNTs) layer on the optical properties of pyramidal Porous Silicon (pPSi) in hybrid SWCNTs/pPSi structure synthetized by chemical and electrochemical etching of silicon wafer was studied. Using both scanning electron mi croscopy (SEM), SWCNTs formed a thin film on pPSi surface and they are partly embedded in its pores. An analysis of Raman spectra for the realized structures confirmed the passivation of pPSi surface by SWCNTs film. The surface bond configurations were also monitored. Moreover, SWCNTs modified Pho toluminescence (PL) spectrum of pPSi by shifting PL peaks towards high energies, showed that the defect created in the materials can result in an efficient and stabilized photoluminescence response on Silicon (Si).

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