<span lang="EN-US">In this paper, we investigated the effect of magnetic field on the carrier transport phenomenon in metal-oxide-semiconductor field-effect transistor (MOSFET) with double gates by examining the behavior of the semiconductor under the Lorentz force and a constant magnetic field. Various behaviors within the channel have been simulated including the potential distribution, conduction and valence bands, total current density, total charge density and the magnetic field. The results obtained indicate that this modulation affects the electrical characteristics of the device such as on-state current (I_ON), subthreshold leakage current (I_OF), threshold voltage (V_Th), and the Hall voltage (V_H) is induced by the magnetic field. The change in threshold voltage caused by the magnetic field has been observed to affect the switching characteristics of the device, such as speed and power loss, as well as the threshold voltage V_Th and (I_ON/I_OF) ratio. Note that it is reduced by 10-3 V. 102 for magnetic fields of ±6 and ±5.5 tesla respectively.</span>

<p>In this paper, a complementary metal oxide semiconductor (CMOS) instrumental amplifier was designed and implemented in order to provide the possibility of controlling the current and voltage gain. The proposed instrumentation amplifier consists of three conveyors with active resistor. The parasitic resistance value (Rx) was reduced with a large bandwidth level in addition to achieving a high common mode rejection ratio (CMRR). Simulation was performed by using 0.35μm CMOS technology by using the advanced design system (ADS) software. The results obtained prove that the proposed circuit has a good efficiency with higher degree of CMRR in comparison with other amplifiers designed and implemented in other similar works.</p>