Here we report for the first time a passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots(QDs) grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 µm. Self-starting pulses with repetition rates around 23 and 39 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation. A RF spectral width as low as 20 kHz has been obtained leading to a low timing jitter RMS.

(2011) The self-consistent nonlinear theory of electron cyclotron maser based on anomalous Doppler effect Appl. Phys. Lett. 98, 261502 (2011) Cavity quantum electrodynamics for photon mediated transfer of quantum states J. Appl. Phys. 109, 113110 (2011) A method of suppressing mode competition in a coaxial localized-defect Bragg resonator operating in a higherorder mode Phys. Plasmas 18, 064506 (2011) Strong coupling between a photonic crystal nanobeam cavity and a single quantum dot Appl. Phys. Lett. 98, 173104 (2011) Additional information on J. Appl. Phys. This paper reports recent results on InAs/InP quantum dash-based, two-section, passively modelocked lasers pulsing at 41 GHz and 10.6 GHz and emitting at 1.59 lm at 20 C. The 41-GHz device (1 mm long) starts lasing at 25 mA under uniform injection and the 10.6 GHz (4 mm long) at 71 mA. Their output pulses are significantly chirped. The 41-GHz laser exhibits 7 ps pulses after propagation in 60 m of a single-mode fiber. The 10.6-GHz laser generates one picosecond pulses with 545 m of a single-mode fiber. Its single side-band phase noise does not exceed -80 dBc/Hz at 100 kHz offset, leading to an average timing jitter of 800 fs.

International audienceThis paper aims to investigate the effects of the temperature on the mode-locking capability of two section InAs/InP quantum nanostructure (QN) passively mode locked lasers. Devices are made with multi-layers of self-assembled InAs QN either grown on InP(100) (5 quantum dashes (QDashes) layers) or on InP (311)B (6 quantum dots (QDs) layers). Using an analytical model, the mode-locking stability map is extracted for the two types of QN as a function of optical absorption, cavity length, current density and temperature. We believe that this study is of first importance since it reports for the first time a systematic investigation of the temperature-dependence on the mode-locking properties of InAs/InP QN devices. Beside, a rigorous comparison between QDashes and QDs temperature dependence is proposed through a proper analysis of the mode-locking stability maps. Experimental results also show that under some specific conditions the mode-locking operation can be temperature independent

International audienceWe report original results on GSMBE grown InAs/InP QD structures. Three single section devices show passive mode locking from 20 GHz to 83 GHz with low RF spectral width (32 kHz) and low pulse duration of 1.3 ps. We report also a double wavelength emission at high injection current, associated with degradation of mode locking properties. The real cause of these phenomena is still unclear

International audienceWe report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation