Low-voltage-operating high-performance organic field-effect transistors (OFETs) are regarded as the building blocks of analog and digital integrated circuits for next-generation electronics. To fulfill this, such an OFET must have high-dielectric constant (k) characteristics for increasing the capacitance values to make enough of a field-effect charge, a hydrophobic surface that does not cause charge trapping, and a low leakage current property to guarantee operating stability. This study demonstrates a new strategy to induce high-k characteristics (>8) with durable polysilsesquioxane (PSQ)-based dielectrics. This strategy involves realizing a dipolar side-chain reorientation under an electric field and its applications to low-voltage-driving OFETs showing high field-effect mobility levels as high as 27 cm 2 V -1 s -1 . Different PSQs are characterized, and the differences in their characteristics lead to distinct polarization phenomena, resulting in different hysteresis behaviors during device operation. The printed unit devices can also be fabricated on flexible platforms and integrated devices through these materials and show robust switching or memory performances under low-voltage-operation conditions. Therefore, this facile but powerful synthesis strategy for high-k PSQ dielectrics can pave a new path for the production of practical printable high-k dielectrics for organic electronics and hence realize next-generation integrated electronics.

A solution processed blue organic light emitting diodes was fabricated by using single component crosslinkable blue emitting materials. We successfully reduced a crosslinking temperaturedown to 135 °C by applying unique cyclic crosslinking units. From first blue emitting material, we obtained 7.86 cd/A of maximum current efficiency (CE) and 2.90 % of external quantum efficiency. And, we modified such material to give deeper blue OLED showing (0.16, 0.13) in CIE 1931 coordinate.

Logic Devices In article number 2104030, Jihoon Lee, Tae Kyu An, Insik In, Se Hyun Kim, and co‐workers design a fancy strategy for the realization of high‐k polysilsesquioxane materials and apply these materials to low‐voltage operating unit and integrated devices. This work has inspired research towards the further development of practical organic electronics by providing methods for fabricating high‐k dielectrics with various types of polymeric materials.