This paper studies spin–orbit torque (SOT) switching behaviors in synthetic antiferromagnet (SyAF) structures of Ta/[Pt/Co]m/Ru/[Co/Pt]n, which are asymmetric between the upper multilayer (UML) and the bottom multilayer (BML). The SOT-induced magnetization switching loops show multiple transitions of switching orientations between clockwise and anticlockwise with an increasing in-plane magnetic field, determined by the effects of the Dzyaloshinskii–Moriya interaction from both the BML and UML in the different stacking structures. Moreover, the field-free SOT switching was observed in the structure of Ta/[Pt/Co]3/Ru (0.5)/[Co/Pt]4. It can be attributed to the horizontal component of magnetic moments in its UML acting as an equivalent field. Therefore, the SyAF structures could be potential candidates for the future SOT-based spintronic devices.

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Flexible electronic devices have shown increasingly promising value facilitating our daily lives. However, flexible spintronic devices remain in their infancy. Here, this research demonstrates a type of nonvolatile, low power dissipation, and programmable flexible spin logic device, which is based on the spin−orbit torque in polyimide (PI)/Ta/Pt/Co/Pt heterostructures fabricated via capillary-assisted electrochemical delamination. The magnetization switching ratio is shown to be about 50% for the flexible device and does not change after 100 cycles of bending, indicating the device has stable performance. By designing the path of pulse current, five Boolean logic gates AND, NAND, NOT, NOR, and OR can be realized in an integrated two-element device. Moreover, such peeling-off devices can be successfully transferred to almost any substrate, such as paper and human skin, and maintain high performance. The flexible PI/Ta/Pt/Co/Pt spin logic device serves as logic-in-memory architecture and can be used in wearable electronics.