The low-frequency noise characteristics of MOS transistors with SiO2 films formed by reactive sputtering as gate insulators were investigated. An attempt is made to analyze the characteristics on the basis of the tunneling model. Reasonable agreement of the experimental result with the theorectical characteristics is found. Some informations on the noise generation centers are obtained.

Aluminum oxide (Al2O3) silicon MOS structures formed by DC reactive sputtering of pure aluminum in a low pressure oxygen ambient are subjected to heat treatments in various environments, and the interface characteristics of these structures are evaluated. The surface state density at the Al2O3-Si interface is found to be diminished by annealing in a nitrogen ambient, and be reduced further by additional heat treatment in a hydrogen ambient over a comparatively wide energy range.

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